ASTM E722-2009e1 确定电子辐射强度试验用等效单能级中子流量的能级中中子流量能谱的特征的标准实施规程

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【英文标准名称】:StandardPracticeforCharacterizingNeutronFluenceSpectrainTermsofanEquivalentMonoenergeticNeutronFluenceforRadiation-HardnessTestingofElectronics
【原文标准名称】:确定电子辐射强度试验用等效单能级中子流量的能级中中子流量能谱的特征的标准实施规程
【标准号】:ASTME722-2009e1
【标准状态】:现行
【国别】:美国
【发布日期】:2009
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:E10.07
【标准类型】:(Practice)
【标准水平】:()
【中文主题词】:
【英文主题词】:displacementdamage;electronichardness;galliumarsenide;hardnessparameter;silicon;silicondamage;siliconequivalentdamage(SED);1&x2013;MeVequivalentfluence;Displacement--electronicmaterials/applications;
【摘要】:Thispracticeisimportantincharacterizingtheradiationhardnessofelectronicdevicesirradiatedbyneutrons.Thischaracterizationmakesitfeasibletopredictsomechangesinoperationalpropertiesofirradiatedsemiconductordevicesorelectronicsystems.Tofacilitateuniformityoftheinterpretationandevaluationofresultsofirradiationsbysourcesofdifferentfluencespectra,itisconvenienttoreducetheincidentneutronfluencefromasourcetoasingleparameterx2014;anequivalentmonoenergeticneutronfluencex2014;applicabletoaparticularsemiconductormaterial.Inordertodetermineanequivalentmonoenergeticneutronfluence,itisnecessarytoevaluatethedisplacementdamageoftheparticularsemiconductormaterial.Ideally,thisquantityiscorrelatedtothedegradationofaspecificfunctionalperformanceparameter(suchascurrentgain)ofthesemiconductordeviceorsystembeingtested.However,thiscorrelationhasnotbeenestablishedunequivocallyforalldevicetypesandperformanceparameterssince,inmanyinstances,othereffectsalsocanbeimportant.Ionizationeffectsproducedbytheincidentneutronfluenceorbygammaraysinamixedneutronfluence,short-termandlong-termannealing,andotherfactorscancontributetoobservedperformancedegradation(damage).Thus,cautionshouldbeexercisedinmakingacorrelationbetweencalculateddisplacementdamageandperformancedegradationofagivenelectronicdevice.Thetypesofdevicesforwhichthiscorrelationisapplicable,andnumericalevaluationofdisplacementdamagearediscussedintheannexes.Theconceptof1-MeVequivalentfluenceiswidelyusedintheradiation-hardnesstestingcommunity.Ithasmeritsanddisadvantagesthathavebeendebatedwidely(9-12).Forthesereasons,specificsofastandardapplicationofthe1-MeVequivalentfluencearepresentedintheannexes.1.1Thispracticecoversproceduresforcharacterizingneutronfluencefromasourceintermsofanequivalentmonoenergeticneutronfluence.Itisapplicabletoneutroneffectstesting,tothedevelopmentoftestspecifications,andtothecharacterizationofneutrontestenvironments.Thesourcesmayhaveabroadneutron-energyrange,ormaybemono-energeticneutronsourceswithenergiesupto20MeV.Thispracticeisnotapplicableincaseswherethepredominantsourceofdisplacementdamageisfromneutronsofenergylessthan10keV.Therelevantequivalenceisintermsofaspecifiedeffectoncertainphysicalpropertiesofmaterialsuponwhichthesourcespectrumisincident.Inordertoachievethis,knowledgeoftheeffectsofneutronsasafunctionofenergyonthespecificpropertyofthematerialofinterestisrequired.Sharpvariationsintheeffectswithneutronenergymaylimittheusefulnessofthispracticeinthecaseofmono-energeticsources.1.2Thispracticeispresentedinamannertobeofgeneralapplicationtoavarietyofmaterialsandsources.Correlationbetweendisplacements(1-3)causedbydifferentparticles(electrons,neutrons,protons,andheavyions)isbeyondthescopeofthispractice.Inradiation-hardnesstestingofelectronicsemiconductordevices,specificmaterialsofinterestincludesiliconandgalliumarsenide,andtheneutronsourcesgenerallyaretestandresearchreactorsandcalifornium-252irradiators.1.3Thetechniqueinvolvedreliesonthefollowingfactors:(1)adetaileddeterminationofthefluencespectrumoftheneutronsource,and(2)aknowledgeofthedegradation(damage)effectsofneutronsasafunctionofenergyonspecificmaterialproperties.1.4Thedetaileddeterminationoft......
【中国标准分类号】:A58
【国际标准分类号】:31_080_01
【页数】:27P.;A4
【正文语种】:英语